Substrate including semiconductors arranged in a matrix and a display device

ABSTRACT

According to one embodiment, a display device including an insulating substrate, a first gate driver, a first gate line and a conductive material layer is provided. The first gate line has a first end connected to the first gate driver and a second end opposite to the first end, and extends in a first direction. The conductive material layer is located between the insulating substrate and the first gate line, overlaps the first gate line, and extends in the first direction. In the display device, the second end of the first gate line is electrically connected to the conductive material layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/357,469 filed Mar. 19, 2019, which is a continuation of U.S.application Ser. No. 15/874,221, filed Jan. 18, 2018, and is based uponand claims the benefit of priority from Japanese Patent Application No.2017-008619, filed Jan. 20, 2017, the entire contents of each of whichare incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a display device.

BACKGROUND

In liquid crystal display devices used in smartphones, tablet computers,etc., there has been demand for narrower frames. Therefore, if circuitssuch as a gate driver are built in a display panel, the built-incircuits usually adopt a one-side drive/one-side power supply method.

In a transmissive liquid crystal display device, to preventdeterioration of a switching element and leak current, a light-shieldinglayer serving as a shield against light from a backlight is provided insome cases. It is known that, to prevent the light-shielding layer frombecoming electrically floating, the light-shielding layer iselectrically connected to a gate electrode of the switching element, forexample.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing the structure of a display device of thepresent embodiment.

FIG. 2 is a diagram showing the basic structure and the equivalentcircuit of a display panel shown in FIG. 1 .

FIG. 3 is a plan view of a structural example of a first substrate.

FIG. 4 is a plan view of the structure of a pixel.

FIG. 5 is a sectional view of part of the display panel taken along lineA-B shown in FIG. 4 .

FIG. 6 is a sectional view of part of the display panel taken along lineC-D shown in FIG. 4 .

FIG. 7 is a plan view of another structural example of the firstsubstrate.

FIG. 8 is a plan view of another structural example of the firstsubstrate.

FIG. 9 is a plan view of another structural example of the firstsubstrate.

FIG. 10 is a sectional view of part of the display panel taken alongline E-F shown in FIG. 9 .

DETAILED DESCRIPTION

In general, according to one embodiment, a display device including aninsulating substrate, a first gate driver, a first gate line and aconductive material layer is provided. The first gate line has a firstend connected to the first gate driver and a second end opposite to thefirst end, and extends in a first direction. The conductive materiallayer is located between the insulating substrate and the first gateline, overlaps the first gate line, and extends in the first direction.In the display device, the second end of the first gate line iselectrically connected to the conductive material layer.

Embodiments will be described hereinafter with reference to theaccompanying drawings. Incidentally, the disclosure is merely anexample, and proper changes within the spirit of the invention, whichare easily conceivable by a skilled person, are included in the scope ofthe invention as a matter of course. In addition, in some cases, inorder to make the description clearer, the widths, thicknesses, shapes,etc., of the respective parts are schematically illustrated in thedrawings, compared to the actual modes. However, the schematicillustration is merely an example, and adds no restrictions to theinterpretation of the invention. Besides, in the specification anddrawings, the structural elements having functions, which are identicalor similar to the functions of the structural elements described inconnection with preceding drawings, are denoted by like referencenumerals, and an overlapping detailed description is omitted unlessotherwise necessary.

FIG. 1 shows the structure of a display device DSP of the presentembodiment. A first direction X and a second direction Y shown in thedrawing cross each other. For example, the first direction X and thesecond direction Y orthogonally cross each other, but the firstdirection X and the second direction Y may cross each other at an angleother than an angle of 90 degrees.

In the present embodiment, a liquid crystal display device will bedescribed as an example of the display device. The main structuredisclosed in the present embodiment is also applicable to variousdisplay devices such as a self-luminous display device having an organicelectroluminescent display element, etc., an electronic paper-typedisplay device having an electrophoretic element, etc., a display deviceadopting a micro-electromechanical system (MEMS), and an electrochromicdisplay device.

The display device DSP includes a display panel PNL, a driver IC chip 1which drives the display panel PNL, etc. The display panel PNL is aliquid crystal display panel, for example, and includes a firstsubstrate SUB1, a second substrate SUB2, a sealant SE, a peripherallight-shielding layer BMA and a liquid crystal layer (liquid crystallayer LC which will be described later). The second substrate SUB2 isopposed to the first substrate SUB1. The sealant SE is provided in aregion shown by rising diagonal lines, and attaches the first substrateSUB1 and the second substrate SUB2 to each other. The peripherallight-shielding layer BMA is provided in a region shown by fallingdiagonal lines, and is formed of the same material as that of alight-shielding layer BM which will be described later. The displaypanel PNL includes a display area DA which displays an image, and anon-display area NDA which has the shape of a frame and surrounds thedisplay area DA. In the present embodiment, the display area DA is aregion enclosed in the peripheral light-shielding layer BMA, and thenon-display area NDA is a region in which the peripheral light-shieldinglayer MBA is provided.

The driver IC chip 1 is located in the non-display area NDA. In theexample illustrated, the driver IC chip 1 is provided in a mountingportion MT of the first substrate SUB1 which extends beyond the secondsubstrate SUB2. For example, a display driver which outputs a signalnecessary for image display is incorporated in the driver IC chip 1. Thedisplay driver here includes at least part of a source driver SD, a gatedriver GD and a common electrode driver circuit CD which will bedescribed later. The driver IC chip 1 is not limited to the exampleillustrated but may be provided on a flexible printed circuit boardwhich is separately connected to the display panel PNL.

The display panel PNL of the present embodiment may be any one of atransmissive display panel having a transmissive display function ofdisplaying an image by selectively transmitting light from a backsurface side of the first substrate SUB1, a reflective display panelhaving a reflective display function of displaying an image byselectively reflecting light from a front surface side of the secondsubstrate SUB2, and a transflective display panel having thetransmissive display function and the reflective display function.

Further, although detailed description of the structure of the displaypanel PNL will be omitted here, the display panel PNL may have astructure conforming to any one of a display mode using a lateralelectric field along an X-Y plane or a main surface of a substrate, adisplay mode using a longitudinal electric field along a normal of theX-Y plane, and a display mode using an oblique electric field which isoblique with the X-Y plane. Still further, the display panel PNL mayhave a structure conforming to a display mode using an arbitrarycombination of the longitudinal electric field, the lateral electricfield and the oblique electric field.

FIG. 2 is a diagram showing the basic structure and the equivalentcircuit of the display panel PNL shown in FIG. 1 . The display panel PNLincludes a plurality of pixels PX in the display area DA. The pixels PXare arranged in a matrix. Further, the display panel PNL includes aplurality of gate lines G (G1 to Gn), a plurality of source lines S (S1to Sm), a common electrode CE, etc., in the display area DA. The gatelines G extend in the first direction X and are arranged in the seconddirection Y. The source lines S extend in the second direction Y and arearranged in the first direction X. The gate lines G and the source linesS are not necessarily extended linearly but may be partially bent. Thecommon electrode CE is provided over the pixels PX.

The display panel PNL includes gate drivers GD1 and GD2, and a sourcedriver SD in the non-display area NDA. The gate driver (first gatedriver) GD1 and the gate driver (second gate driver) GD2 face each otheracross the display area DA in the first direction X. The gate lines Gare connected to one of the gate drivers GD1 and GD2. In the exampleillustrated, the odd-numbered gate lines G1, G3, . . . are connected tothe gate driver GD1. The even-numbered gate lines G2, G4, . . . areconnected to the gate driver GD2. The source lines S are connected tothe source driver SD. The common electrode CE is connected to the commonelectrode driver circuit CD. The source driver SD, the gate driver GD1and GD2 and the common electrode driver CD may be formed on the firstsubstrate SUB1 or may be partially or entirely incorporated in thedriver IC chip 1 shown in FIG. 1 , in the non-display area NDA.

Each pixel PX includes a switching element SW, a pixel electrode PE, thecommon electrode CE, a liquid crystal layer LC, etc. The switchingelement SW is formed of a thin-film transistor (TFT), for example, andis electrically connected to the gate line G and the source line S. Thegate line G is connected to the respective switching elements SW of thepixels PX arranged in the first direction X. The source line S isconnected to the respective switching elements SW of the pixels PXarranged in the second direction Y. The pixel electrode PE iselectrically connected to the switching element SW. Each pixel electrodePE is opposed to the common electrode CE and drives the liquid crystallayer LC by an electric field formed between the pixel electrode PE andthe common electrode CE. Storage capacitance CS is formed between anelectrode having the same potential as that of the common electrode CEand an electrode having the same potential as that of the pixelelectrode PE, for example. The gate line G, the source line S, theswitching element SW, the pixel electrode PE, the common electrode CE,etc., are provided in the first substrate SUB1 shown in FIG. 1 .

FIG. 3 is a plan view of a structural example of the first substrateSUB1. The first substrate SUB1 is one of the substrates which constitutethe display panel PNL. The example illustrated corresponds to an exampleadopting a fringe field switching (FFS) mode, which is one of thedisplay modes using the lateral electric field.

The first substrate SUB1 is located over the display area DA and thenon-display area NDA. The first substrate SUB1 includes light-shieldinglayers LS (LS1, LS2 and LS3), relay electrodes PE1, relay electrodes RE2(RE21, RE22 and RE23), etc., in addition to the gate drivers GD1 andGD2, the gate lines G (G1, G2 and G3), the source lines S (S1, S2, Sm−1and Sm), the switching elements SW and the pixel electrodes PE.

The gate drivers GD1 and GD2 are arranged in the non-display area NDA ofthe first substrate SUB1. In the example illustrated, the non-displayarea NDA has a first non-display area NDA1 adjacent to the left side ofthe display area DA and a second non-display area NDA2 adjacent to theright side of the display area DA. The gate driver GD1 is located in thefirst non-display area NDA1, and the gate driver GD2 is located in thesecond non-display area NDA2. That is, the gate driver GD1 and the gatedriver GD2 face each other across the display area DA in the firstdirection X. In the example illustrated, the gate driver GD1 and thegate driver GD2 are arranged in regions which have length in the seconddirection Y and width in the first direction X.

The source lines S are formed in a strip shape having a substantiallyconstant width, and cross the gate lines G, respectively, in the displayarea DA. All the source lines S are located between the gate driver GD1and the gate driver GD2. The source line S1 corresponds to the sourceline closest to the first non-display area NDA1 in the display area DA,and is located at the left edge of the display area DA in the drawing.The source line Sm corresponds to the source line closest to the secondnon-display area NDA2 in the display area DA, and is located at theright edge of the display area DA in the drawing.

The switching elements SW are formed between the adjacent source linesS. For example, the switching element SW is arranged in the vicinity ofthe gate line G1 between the source line Sm−1 and the source line Sm.The switching element SW is connected to the source line Sm, and is alsoelectrically connected to the pixel electrode PE via the relay electrodeRE1. The structure of the pixel PX including the switching element SWwill be described later.

The gate lines G are formed in a strip shape having a substantiallyconstant width, and are drawn to the first non-display area NDA1 and thesecond non-display area NDA2. That is, both ends of the gate lines G inthe first direction X are located in the non-display area NDA. Morespecifically, one ends EG11 and EG31 of the gate lines G1 and G3 areconnected to the gate driver GD1 in the first non-display area NDA1. Theother ends EG12 and EG32 of the gate lines G1 and G3 are located in thesecond non-display area NDA2 and are spaced apart from the gate driverGD2. In the example illustrated, the other ends EG12 and EG32 arelocated between the source line Sm and the gate driver GD2. On the otherhand, one end EG21 of the gate line G2 is located in the firstnon-display area NDA1 and is spaced apart from the gate driver GD1. Inthe example illustrated, one end EG21 is located between the source lineS1 and the gate driver GD1. The other end EG22 of the gate line G2 isconnected to the gate driver GD2 in the second non-display area NDA2.

Conductive material layers, for example, the light-shielding layers LSextend in the first direction X and overlap the gate lines G. Thelight-shielding layers LS, except ends thereof, are formed in a stripshape having a substantially constant width. The width here correspondsto width in the second direction Y. In the present embodiment, a lengthLLS of the light-shielding layer LS1 in the first direction X is greaterthan a length LDA of the display area DA in the first direction X. Forexample, the length LLS is substantially equal to a length LG1 of thegate line G1 in the first direction X. Further, both ends of thelight-shielding layers LS are located in the non-display area NDA. Inthe non-display area NDA, the light-shielding layer LS is connected tothe gate driver connected to the corresponding gate line G and iselectrically connected to the gate line G at the end opposite to thegate driver.

More specifically, one end EL11 of the light-shielding layer LS1 isconnected to the gate driver GD1 in the first non-display area NDA1. Theother end EL12 of the light-shielding layer LS1 is located in the secondnon-display area NDA2 and overlaps the end EG12. That is, the other endEL12 is located between the source line Sm and the gate driver GD2 andis spaced apart from the gate driver GD2. The light-shielding layer LS1is electrically connected to the other end EG12 via the relay electrodeRE21 which overlaps the other end EL12 and the other end EG12.Accordingly, the gate line G1 and the light-shielding layer LS1 areelectrically connected to each other in the second non-display areaNDA2.

On the other hand, one end EL21 of the light-shielding layer LS2 islocated in the first non-display area NDA1 and overlaps one end EG21.That is, one end EL21 is located between the gate driver GD1 and thesource line S1 and is spaced apart from the gate driver GD1. The otherend EL22 of the light-shielding layer LS2 is connected to the gatedriver GD2 in the second non-display area NDA2. The light-shieldinglayer LS2 is electrically connected to the gate line G2 via the relayelectrode RE22 which overlaps one end EL21 and one end EG21. Thestructure of the light-shielding layer LS3 is the same as that of thelight-shielding layer LS1, and thus detailed description thereof will beomitted.

In the present embodiment, one end EG11 corresponds to the first end ofthe first gate line, and the other end EG12 corresponds to the secondend of the first gate line. One end EL11 corresponds to the third end ofthe light-shielding layer, and the other end EL12 corresponds to thefourth end of the light-shielding layer. One end EG21 corresponds to thesixth end of the second gate line, and the other end EG22 corresponds tothe fifth end of the second gate line. Further, the relay electrode RE21corresponds to the first relay electrode, and the relay electrode RE22corresponds to the third relay electrode.

FIG. 4 is a plan view of the structure of the pixel PX. This is a planview of the first substrate SUB1. FIG. 4 is an enlarged view of thevicinity of the pixel PX which is most distant from the gate driver GD1in the first direction X. The first substrate SUB1 includes the commonelectrode, for example, but the illustration of the common electrode isomitted here.

The first substrate SUB1 includes the gate line G1, the light-shieldinglayer LS1, the source lines Sm−1 and Sm, the switching element SW, thepixel electrode PE, the relay electrodes RE1 and RE21, etc.

The gate line G1 has a width WG1 less than a width WLS of thelight-shielding layer LS1 and entirely overlaps the light-shieldinglayer LS1. In the example illustrated, the gate line G1 is located in asubstantially center of the light-shielding layer LS1.

The switching element SW is formed between the source line Sm−1 and thesource line Sm. For example, the switching element SW is a single-gatethin-film transistor which is electrically connected to the source lineSm and the pixel electrode PE. The switching element SW includes asemiconductor layer SC, a gate electrode GE, the relay electrode RE1,etc.

The semiconductor layer SC is substantially L-shaped and has a firstportion SC1 and a second portion SC2. The first portion SC1 extends inthe second direction Y between the source line Sm−1 and the source lineSm, and crosses the gate line G1 and the light-shielding layer SL1. Thegate electrode GE corresponds to a portion of the gate line G1 crossingthe first portion SC1. One end of the first portion SC1 overlays thepixel electrode PE and the relay electrode RE1. The relay electrode RE1is electrically connected to the first portion SC1 in a contact hole CH1formed in a region overlapping the first portion SC1. The second portionSC2 extends from the other end of the first portion SC1 to the sourceline Sm in the first direction X and crosses the source line Sm. Thesecond portion SC2 is electrically connected to the source line Sm in acontact hole CH2 formed in a region overlapping the source line Sm. Thefirst portion SC1 and the second portion SC2 are linearly formed in theexample illustrated but may be partially bent.

The pixel electrode PE is located between the source line Sm−1 and thesource line Sm. The pixel electrode PE includes an electrode portion PAand a contact portion PB. The electrode portion PA and the contactportion PB are integrally or continuously formed with each other and areelectrically connected to each other. The contact portion PB is closerto the gate line G1 than the electrode portion PA. That is, the contactportion PB is arranged in a location overlapping the relay electrode RE1and is electrically connected to the relay electrode RE1. Accordingly,the pixel electrode PE is electrically connected to the switchingelement SW. The electrode portion PA extends from the contact portion PBin the second direction Y. In the example illustrated, the pixelelectrode PE has three electrode portions PA. The three electrodeportions PA are arranged in the first direction X at intervals and areformed in a strip shape having a substantially constant width in thefirst direction X. The shape of the pixel electrode PE is not limited tothe example illustrated but may be appropriately changed in accordancewith the shape of the pixel PX, etc. For example, the pixel electrode PEmay extend in an oblique direction crossing the first direction X andthe second direction Y, and the electrode portion PA may extend in theoblique direction.

Next, the other end EL12 of the light-shielding layer LS1 and the otherend EG12 of the gate line G1 will be described.

In the present embodiment, the other end EL12 corresponds to a region ofthe light-shielding layer LS1 which nearly overlaps the relay electrodeRE21. Further, the other end EG12 corresponds to a region of the gateline G1 which nearly overlaps the relay electrode RE21. In the exampleillustrated, the other end EL12 has the shape of a rectangle, and thesides of the rectangle in the second direction Y are longer than thesides of the rectangle in the first direction X. For example, a width(first width) WEL of the other end EL12 is about twice the width (secondwidth) WLS. The width here corresponds to width in the second directionY.

The relay electrode RE21 overlaps the other end EL12 and the other endEG12. More specifically, the relay electrode RE21 has a region whichoverlaps both the other end EL12 and the other end EG12, and a regionwhich overlaps the other end EL12 but does not overlap the other endEG12. In the example illustrated, the relay electrode RE21 has the sameshape as that of the other end EL12, and the entire relay electrode RE21is located within the region of the other end EL12. A contact hole CH3and a contact hole CH4 are formed in a region in which the relayelectrode RE21 is provided. The contact holes CH3 and CH4 are arrangedin the second direction Y. The contact hole CH3 is located in a regionin which the relay electrode RE21 and the gate line G1 overlap eachother. Within the region in which the relay electrode RE21 and the otherend EL12 overlap each other, the contact hole CH4 is located in a regionwhich does not overlap the gate line G1.

The relay electrode 21 is connected to the gate line G1 in the contacthole CH3. Further, the relay electrode RE21 is connected to thelight-shielding layer LS1 in the contact hole CH4. In this way, thelight-shielding layer LS1 and the gate line G1 are electricallyconnected to each other via the relay electrode RE21 in the non-displayarea NDA. In the example illustrated, the contact holes CH3 and CH4 haverectangular shapes having substantially equal sizes. That is, the areaof a region in which the relay electrode RE21 and the gate line G1contact each other is substantially equal to the area of a region inwhich the relay electrode RE21 and the light-shielding layer LS1 contacteach other. However, the sizes and shapes of the contact holes CH3 andCH4 may be appropriately changed. Further, the contact hole CH3 and thecontact hole CH4 may be arranged in a direction crossing the seconddirection Y.

FIG. 5 is a sectional view of part of the display panel PNL taken alongline A-B shown in FIG. 4 . In FIG. 5 , a direction from the firstsubstrate SUB1 to the second substrate SUB2 is defined as a thirddirection Z. Further, the third direction Z is referred to as up orabove, and the opposite direction to the third direction Z is referredto as down or below.

The first substrate SUB1 includes a first insulating substrate 10, aninsulating film 11, an insulating film 12, an insulating film 13, aninsulating film 14, an insulating film 15, an insulating film 16, thelight-shielding layer LS1, the semiconductor layer SC, metal protectionfilms M1 and M2, the gate electrode GE (gate line G1), the source lineSm, the relay electrode RE1, the common electrode CE, the pixelelectrode PE, a first alignment film AL1, etc.

The first insulating substrate 10 is a light transmissive substrate suchas a glass substrate or a resin substrate. The insulating film 11 isformed on the first insulating substrate 10. The light-shielding layerLS1 is located on the insulating film 11. The light shielding layer LS1serves as a shield against light transmitted to the semiconductor layerSC from a backlight unit BL which will be described later. Thelight-shielding layer LS1 is formed of a metal material such as titanium(Ti), for example. The insulating film 12 covers the light-shieldinglayer LS1 and is also formed on the insulating film 11. Thesemiconductor layer SC is located on the insulating film 12 andpartially overlaps the light-shielding layer LS1. The semiconductorlayer SC is formed of a transparent amorphous oxide semiconductor(TAOS), for example, but the semiconductor layer SC may be formed ofpolycrystalline silicon or amorphous silicon. The metal protection filmsM1 and M2 are spaced apart from each other and contact on an uppersurface SA of the semiconductor layer SC. The insulating film 13 coversthe semiconductor layer SC and the metal protection films M1 and M2.

The gate electrode GE, which is part of the gate line G1, is located onthe insulating film 13 and is covered with the insulating film 14. Thegate electrode GE is located directly above a region of thesemiconductor layer SC which is opposed to the light-shielding layerLS1. The gate line G1 and the metal protection films M1 and M2 areformed of a metal material such as aluminum (Al), titanium (Ti), silver(Ag), molybdenum (Mo), tungsten (W), copper (Cu) or chromium (Cr), analloy of these metal materials, etc., and may have a single layerstructure or a multi-layer structure.

The source line Sm and the relay electrode RE1 are located on theinsulating film 14 and are covered with the insulating film 15. Thesource line Sm and the relay electrode RE1 are formed of the samematerial and may be formed of the above-described metal material. Thesource line Sm contacts the metal protection film M1 in the contact holeCH2 which penetrates the insulating film 13 and the insulating film 14.The relay electrode RE1 contacts the metal protection film M2 in thecontact hole CH1 which penetrates the insulating film 13 and theinsulating film 14. That is, the metal protection film M1 is locatedbetween the semiconductor layer SC and the source line Sm, and the metalprotection film M2 is located between the semiconductor layer SC and therelay electrode RE1.

The common electrode CE is located on the insulating film 15 and iscovered with the insulating film 16. The pixel electrode PE is locatedon the insulating film 16 and is covered with the first alignment filmAL1. Part of the pixel electrode PE is opposed to the common electrodeCE via the insulating film 16. The common electrode CE and the pixelelectrode PE are formed of a transparent conductive material such asindium tin oxide (ITO) or indium zinc oxide (IZO). In a locationoverlapping an opening of the common electrode CE, the pixel electrodePE contacts the relay electrode RE1 in a contact hole CH6 whichpenetrates the insulating film 15 and the insulating film 16. In theexample illustrated, the contact hole CH6 is formed directly above thecontact hole CH1. The insulating film 11, the insulating film 12, theinsulating film 13, the insulating film 14 and the insulating film 16are an inorganic insulating film of silicon oxide, silicon nitride,silicon oxynitride, etc., and may have a single layer structure or amulti-layer structure. The insulating film 15 is an organic insulatingfilm such as acrylic resin.

The second substrate SUB2 includes a second substrate 20, alight-shielding layer BM, a color filter CF, an overcoat layer OC, asecond alignment film AL2, etc.

The light-shielding layer BM and the color filter CF are located on aside of the second insulating substrate 20 which is opposed to the firstsubstrate SUB1. The light-shielding layer BM is formed of a blackcolored resin material, for example, and the pixels are partitioned bythe light-shielding layer BM. For example, the light-shielding layer BMis arranged in a location opposed to the wires such as the source lineSm, the gate line G1, and the switching element SW. The color filter CFis arranged in a location opposed to the pixel electrode PE andpartially overlaps the light-shielding layer BM. The overcoat layer OCcovers the color filter CF. The second alignment film AL2 covers theovercoat layer OC.

The color filter CF may be arranged in the first substrate SUB1. Thelight-shielding layer BM may be arranged between the color filter CF andthe overcoat layer OC or between the overcoat layer OC and the secondalignment film AL2. Further, a pixel which displays white may be added,and in this case, a white color filter may be arranged or an uncoloredresin material may be arranged in the white pixel, or the overcoat layerOC may be arranged without any color filter.

The first substrate SUB1 and the second substrate SUB2 are arranged suchthat the first alignment film AL1 and the second alignment film AL2 areopposed to each other. A predetermined cell gap is formed between thefirst alignment film AL1 and the second alignment film AL2. The cell gapis 2 to 5 μm, for example. The first substrate SUB1 and the secondsubstrate SUB2 are attached to each other by a sealant with thePredetermined cell gap formed.

The liquid crystal layer LC is located between the first substrate SUB1and the second substrate SUB2 and is held between the first alignmentfilm AL1 and the second alignment film AL2. The liquid crystal layer LCincludes liquid crystal molecules. The liquid crystal layer LC is formedof a liquid crystal material having positive dielectric anisotropy or aliquid crystal material having negative dielectric anisotropy.

With respect to the display panel PNL having the above-describedstructure, a first optical element OD1 including a first polarizer PL1is arranged below the first substrate SUB1. Further, a second opticalelement OD2 including a second polarizer PL2 is arranged above thesecond substrate SUB2. For example, the first polarizer PL1 and thesecond polarizer PL2 are arranged such that absorption axes thereoforthogonally cross each other in an X-Y plane. The first optical elementOD1 and the second optical element OD2 may include a retardation filmsuch as a quarter-wave plate or a half-wave plate, a scattering layer,an antireflective layer, etc., as needed.

In this structural example, the liquid crystal molecules included in theliquid crystal layer LC are initially aligned in a predetermineddirection between the first alignment direction AL1 and the secondalignment film AL2 in an off state in which an electric field is notformed between the pixel electrode PE and the common electrode CE. Inthe off state, the light emitted from the backlight unit BL toward thedisplay panel PNL is absorbed by the first optical element OD1 and thesecond optical element OD2, and the display becomes dark. On the otherhand, in an on state in which an electric field is formed between thepixel electrode PE and the common electrode CE, the liquid crystalmolecules are aligned in a direction different from the initialalignment direction, and the alignment direction is controlled by theelectric field. In the on state, part of the light from the backlightunit BL is transmitted through the first optical element OD1 and thesecond optical element OD2, and the display becomes bright.

FIG. 6 is a sectional view of part of the display panel PNL taken alongline C-D shown in FIG. 4 . FIG. 6 only shows the main portions of thefirst substrate SUB1.

The other end EL12 has a region A extending beyond the other end EG12 inthe second direction Y. The relay electrode RE21 is located on theinsulating film 14 and overlaps the region A and the other end EG12. Inother words, the gate line G1 is located between the relay electrodeRE21 and the light-shielding layer LS1 but is not interposed between theregion A and the relay electrode RE21. The relay electrode RE21 can beformed of the same material in the same manufacturing process togetherwith the source line Sm and the relay electrode RE1 shown in FIG. 5 .

The contact hole CH3 is formed directly above the other end EG12 andpenetrates the insulating film 14. The contact hole CH4 is formeddirectly above the region A and penetrates the insulating film 14, theinsulating film 13 and the insulating film 12. The relay electrode RE21contacts an upper surface EGT of the other end EG12 in the contact holeCH3 and contacts an upper surface ELT of the other end EL12 in thecontact hole CH4. In this way, the light-shielding layer LS1 and thegate line G1 are electrically connected to each other. In the exampleillustrated, a first contact portion C1 in which the relay electrodeRE21 and the light-shielding layer LS1 contact each other and a secondcontact portion C2 in which the relay electrode RE21 and the gate lineG1 contact each other are arranged in the second direction Y.

In the present embodiment, the insulating film 12 corresponds to thefirst insulating film, the insulating film 13 corresponds to the secondinsulating film, and the insulating film 14 corresponds to the thirdinsulating film. The contact hole CH4 corresponds to the first throughhole which penetrates the third insulating film, the second insulatingfilm and the first insulating film, and the contact hole CH3 correspondsto the second through hole which penetrates the third insulating film.

According to the present embodiment, the light-shielding layer LSoverlapping the gate line G is provided. Therefore, it is possible toprevent the property deterioration and improve the reliability of theswitching element SW including the semiconductor layer SC formed of anoxide semiconductor layer.

The light-shielding layer LS and the gate line G are electricallyconnected to each other. Therefore, it is possible to prevent thelight-shielding layer LS from becoming electrically floating. Further,the light-shielding layer LS and the gate line G are connected to eachother in the non-display area NDA. Therefore, as compared to a casewhere the light-shielding layer LS and the gate line G are electricallyconnected to each other in each pixel PX, for example, the floating ofthe light-shielding layer LS can be prevented without reducing theaperture ratio.

Further, the light-shielding layer LS is electrically connected to thegate line G at both ends. Therefore, as compared to a case where thelight-shielding layer LS is connected to the gate line G at only oneend, the time taken for the potential of the light-shielding layer LS tobecome the same as that of the gate line G can be shortened. That is,even if the light-shielding layer LS and the gate line G have differenttime constants due to differences in material, width, film thickness,etc., the influence of the time constant difference can be suppressed.Accordingly, degradation in display quality can be prevented.

Still further, the contact holes CH3 and CH4 which overlap the relayelectrode RE21 are arranged in the second direction Y. Therefore, thewidth of the non-display area NDA in the first direction X can bereduced as compared to a case where the contact holes CH3 and CH4 arearranged in the first direction X, for example. Still further, as shownin FIG. 3 , for example, when the gate lines G arranged in the seconddirection Y are connected to the gate driver GD1 and the gate driverGD2, alternately, the width of the first non-display area NDA1 and thewidth of the second non-display area NDA2 can be uniformed, and this issuitable for narrowing the frame.

Next, another structural example will be described.

A structural example shown in FIG. 7 differs from the structural exampleshown in FIG. 3 in that both ends of the light-shielding layer LS isconnected to the gate line G via the relay electrode RE2.

One end EL11 of the light-shielding layer LS1 located in the firstnon-display area NDA1 but is spaced apart from the first driver GD1. Inthe example illustrated, one end EL11 is located between the gate driverGD1 and the source line S1. The light-shielding layer LS1 is connectedto the gate line G1 via the relay electrode RE21 a overlapping one endEL11 and the relay electrode RE21 b overlapping the other end EL12.

Further, the other end EL22 of the light-shielding layer LS2 is locatedin the second non-display area NDA2 but is spaced apart from the gatedriver GD2. In the example illustrated, the other end EL22 is locatedbetween the source line Sm and the gate driver GD2. The light-shieldinglayer LS2 is connected to the gate line G2 via the relay electrode RE22a overlapping one end EL21 and the relay electrode RE22 b overlappingthe other end EL22.

The structures of one end EL11 and the other end EL22 are the same asthose of the other end EL12 and one end EL21. In the present embodiment,the relay electrode RE21 b corresponds to the first relay electrode, andthe relay electrode RE21 a corresponds to the second relay electrode.The structure of the light-shielding layer LS3 is the same as that ofthe light-shielding layer LS1, and thus detailed description thereofwill be omitted. The same advantages as those of the structural exampleshown in FIG. 3 can be obtained also in the present structural example.

A structural example shown in FIG. 8 differs from the structural exampleshown in FIG. 3 in that the first substrate SUB1 has one gate driver GD.

In the example illustrated, the gate driver GD is provided in the firstnon-display area NDA1. One ends EG11, EG21 and EG31 and one ends EL11,EL21 and EL31 are connected to the gate driver GD in the firstnon-display area NDA1. The other ends EG12, EG22 and EG32 and the otherends EL12, EL22 and EL32 are located in the second non-display areaNDA2. The light-shielding layers LS1, LS2 and LS3 are connected to thegate lines G1, G2 and G3 via the relay electrodes RE21, RE22 and RE23overlapping the other ends EG12, EG22 and EG32 and the other ends EL12,EL22 and EL32, respectively. One ends EL11, EL21 and EL31 may beconnected to the gate lines G1, G2 and G3 via the relay electrodes RE21a, RE22 a and RE23 a as shown in FIG. 7 .

The same advantages as those of the structural example shown in FIG. 3can be obtained also in the present structural example.

A structural example shown in FIG. 9 differs from the structural exampleshown in FIG. 4 in that the other end EG12 and the other end EL12 areconnected to each other in one contact hole CH5 (through hole).

The contact hole CH5 is located within a region in which the relayelectrode RE21 is provided, and overlaps the other end EG12 and theother end EL12. In the example illustrated, the contact hole CH5 islocated in a substantially center of the relay electrode RE21. In thecontact hole CH5, the area of a region overlapping the other end EG12 issubstantially equal to the area of a region overlapping the other endEL12. The contact hole CH5 has a rectangular shape in the exampleillustrated but may have another shape. Further, a width WEL′ of theother end EL12 may be less than the width WEL shown in FIG. 4 .

FIG. 10 is a sectional view of part of the display panel PNL taken alongline E-F shown in FIG. 9 . The contact hole CH5 penetrates theinsulating film 14, the insulating film 13 and the insulating film 12.In the contact hole CH5, the relay electrode RE21 contacts theinsulating film 14, the insulating film 13 and the insulating film 12and also contacts the upper surface ELT. Further, the relay electrodeRE21 contacts the upper surface EGT and also contacts a side surface EGSof the other end EG12.

The same advantages as those of the structural example shown in FIG. 3can be obtained also in the present structural example. Further,according to the present structural example, the area of the relayelectrode RE21 can be reduced.

As described above, according to the present embodiment, a displaydevice which can prevent degradation in display quality can be provided.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

The invention claimed is:
 1. A substrate comprising: an insulatingsubstrate including a first region, a second region disposed between thefirst region and a first edge of the insulating substrate, and a thirdregion disposed between the first region and a second edge of theinsulating substrate; a plurality of semiconductors disposed in thefirst region; a first gate line disposed in the first region, the secondregion, and the third region, and extending in a first direction; and ametal line located between the insulating substrate and the first gateline, overlapping the first gate line, and extending in the firstdirection, wherein the plurality of semiconductors overlaps the firstgate line and the metal line, and the first gate line is connected tothe metal line in the second region.
 2. The substrate according to claim1, further comprising a first gate driver located in the third region,wherein the first gate driver is connected to the first gate line. 3.The substrate according to claim 2, wherein the metal line includes afirst end located in the second region, and the first end is connectedto the first gate line.
 4. The substrate according to claim 3, wherein afirst width of the metal line in the second region in a second directioncrossing the first direction is greater than a second width of the metalline in the first region in the second direction.
 5. The substrateaccording to claim 4, further comprising a first electrode in the secondregion, wherein the first electrode overlaps the first gate line and themetal line, and the first electrode contacts the first gate line and themetal line.
 6. The substrate according to claim 5, further comprising: afirst contact portion in which the metal line and the first electrodecontact each other; and a second contact portion in which the first gateline and the first electrode contact each other, wherein the firstcontact portion and the second contact portion are arranged in thesecond direction crossing the first direction.
 7. The substrateaccording to claim 2, further comprising a second electrode in the thirdregion, wherein the first gate line is connected to the metal line inthe third region, the second electrode overlaps the first gate line andthe metal line, and the second electrode contacts the first gate lineand the metal line.
 8. A display device comprising: the substrate ofclaim 3; an insulation layer covering the first gate line; a pluralityof pixel electrode provided over the insulation layer; and a liquidcrystal layer or an electroluminescent display element provided over theplurality of pixel electrodes, wherein the plurality of pixel electrodesis connected to the plurality of semiconductors.
 9. The substrateaccording to claim 1, further comprising a first electrode in the secondregion, wherein the first electrode overlaps the first gate line and themetal line, and the first electrode contacts the first gate line and themetal line.
 10. The substrate according to claim 9, further comprising:a first contact portion in which the metal line and the first electrodecontact each other; and a second contact portion in which the first gateline and the first electrode contact each other, wherein the firstcontact portion and the second contact portion are arranged in a seconddirection crossing the first direction.
 11. The substrate according toclaim 1, wherein the plurality of semiconductors are oxidesemiconductors that cross the first gate line and the metal line and arelocated between the first gate line and the metal line.
 12. Thesubstrate according to claim 1, wherein the metal line is alight-shielding layer.